IndiumV3, Russie, Analysis, bibRecord, 000B55

Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces

Identifieur interne : 000B55 ( Russie/Analysis ); précédent : 000B54; suivant : 000B56

Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces

Auteurs : RBID : Pascal:00-0459666

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Photoémission, Etat surface, Adsorption, Césium, Indium antimoniure, Rayonnement synchrotron, Semiconducteur III-V, Cs, In Sb, InSb, 7320A, 7960B.

English descriptors

KwdEn :
- Adsorption, Cesium, Experimental study, III-V semiconductors, Indium antimonides, Photoemission, Surface states, Synchrotron radiation.

Abstract

Tiny amounts of cesium adsorbed on cleaved InSb( 110) surfaces result in a strong downward band bending (BB) and creates a two-dimensional (2D) electron channel in the sub-surface region. For the first time, electron emission arising from this channel was observed for this material. We compare it to the similar situation met previously with InAs(110). In this last case, new high-resolution measurements allow to determine the dispersions of the quantized energy levels, and to derive the average effective mass of the carriers in the channel. For both systems, self-consistent calculations and model-function curve fittings support the experimental results.

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Pascal:00-0459666

Le document en format XML

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<front><div type="abstract" xml:lang="en">Tiny amounts of cesium adsorbed on cleaved InSb( 110) surfaces result in a strong downward band bending (BB) and creates a two-dimensional (2D) electron channel in the sub-surface region. For the first time, electron emission arising from this channel was observed for this material. We compare it to the similar situation met previously with InAs(110). In this last case, new high-resolution measurements allow to determine the dispersions of the quantized energy levels, and to derive the average effective mass of the carriers in the channel. For both systems, self-consistent calculations and model-function curve fittings support the experimental results.</div>
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Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces

Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri